SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.55μm波长发光的自组织InAs量子点生长
澜清; 周大勇; 孔云川; 边历峰; 苗振华; 牛智川; 封松林
2002
Source Publication人工晶体学报
Volume31Issue:5Pages:464-467
Abstract通过引入较长停顿时间,采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点,在荧光光谱中观察到1.55μm波长的发光峰。通过AFM和PL谱的联合研究,表明此低温循环生长方法有利于在长波长发光的量子点的形成。
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金(No.6 176 6和6 2541 ),中国科学院纳米科学与技术资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1016471
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17967
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
澜清,周大勇,孔云川,等. 1.55μm波长发光的自组织InAs量子点生长[J]. 人工晶体学报,2002,31(5):464-467.
APA 澜清.,周大勇.,孔云川.,边历峰.,苗振华.,...&封松林.(2002).1.55μm波长发光的自组织InAs量子点生长.人工晶体学报,31(5),464-467.
MLA 澜清,et al."1.55μm波长发光的自组织InAs量子点生长".人工晶体学报 31.5(2002):464-467.
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