SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺稀土半导体光电特性和应用
陈维德; 陈长勇; 宋淑芳; 许振嘉
2002
Source Publication中国稀土学报
Volume20Issue:6Pages:521-525
Abstract结合我们近年来在掺稀土硅基材料和Ⅲ-Ⅴ族化合物半导体材料的发光研究,简述目前国际上在这方面研究的新进展,重点介绍掺铒硅基发光和掺稀土GaN发光材料和器件的研究结果。
metadata_83中国科学院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(批准号6 176 25,69976 28)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1120296
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17921
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,陈长勇,宋淑芳,等. 掺稀土半导体光电特性和应用[J]. 中国稀土学报,2002,20(6):521-525.
APA 陈维德,陈长勇,宋淑芳,&许振嘉.(2002).掺稀土半导体光电特性和应用.中国稀土学报,20(6),521-525.
MLA 陈维德,et al."掺稀土半导体光电特性和应用".中国稀土学报 20.6(2002):521-525.
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