SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺铒GaN薄膜光致发光的研究
宋淑芳; 陈维德; 陈长勇; 许振嘉
2002
Source Publication中国稀土学报
Volume20Issue:6Pages:535-539
Abstract采用傅立叶变换红外光谱(FT-IR)研究了掺铒GaN薄膜光致发光特性,光致发光谱(PL)的测量结果表明
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助课题(6 176 25)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1120298
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17919
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
宋淑芳,陈维德,陈长勇,等. 掺铒GaN薄膜光致发光的研究[J]. 中国稀土学报,2002,20(6):535-539.
APA 宋淑芳,陈维德,陈长勇,&许振嘉.(2002).掺铒GaN薄膜光致发光的研究.中国稀土学报,20(6),535-539.
MLA 宋淑芳,et al."掺铒GaN薄膜光致发光的研究".中国稀土学报 20.6(2002):535-539.
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