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Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer
Ning Jin; Liu Zhongli; Liu Huanzhang; Ge Yongcai
2003
Source Publication半导体学报
Volume24Issue:5Pages:449-453
AbstractA new technique to fabricate silicon condenser microphone is presented. The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p~+-doping silicon of approximately 15μm thickness for the stiff backplate. The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB (5.6mV/Pa) to -55dB (1.78mV/Pa) under the frequency from 500Hz to 10kHz, and shows a gradual increase at high frequency. The cut-off frequency is above 20kHz.
metadata_83microelectronics r&d center, institute of semiconductors, the chinese academy of sciences
Subject Area微电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:1152110
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17883
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ning Jin,Liu Zhongli,Liu Huanzhang,et al. Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer[J]. 半导体学报,2003,24(5):449-453.
APA Ning Jin,Liu Zhongli,Liu Huanzhang,&Ge Yongcai.(2003).Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer.半导体学报,24(5),449-453.
MLA Ning Jin,et al."Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer".半导体学报 24.5(2003):449-453.
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