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铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长
彭长涛; 陈诺夫; 张富强; 林兰英
2003
Source Publication半导体学报
Volume24Issue:5Pages:494-498
Abstract采用一种新的生长铁磁/半导体异质结材料的方法——物理气相沉积方法生长了一种铁磁/半导体异质结材料MnSb/Si.对所获得的样品进行特征X射线能谱分析表明Mn和Sb在Si衬底上的沉积速率相近,它们的原子百分数之比接近1
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:1152117
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17881
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
彭长涛,陈诺夫,张富强,等. 铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长[J]. 半导体学报,2003,24(5):494-498.
APA 彭长涛,陈诺夫,张富强,&林兰英.(2003).铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长.半导体学报,24(5),494-498.
MLA 彭长涛,et al."铁磁/半导体异质结材料MnSb/Si的物理气相沉积生长".半导体学报 24.5(2003):494-498.
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