SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
6H—SiC Schottky二极管的正向特性
尚也淳; 刘忠立; 王姝睿
2003
Source Publication半导体学报
Volume24Issue:5Pages:504-509
Abstract提出了一种考虑Schottky结势垒不均匀性和界面层作用的SiC Schottky二极管(SBD)正向特性模型,势垒的不均匀性来自于SiC外延层上的各种缺陷,而界面层上的压降会使正向Schottky结的有效势垒增高.该模型能够对不同温度下SiC Schottky结正向特性很好地进行模拟,模拟结果和测量数据相符.它更适用于考虑器件温度变化的场合,从机理上说明了理想因子、有效势垒和温度的关系.
metadata_83中国科学院半导体研究所微电子研究发展中心
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:1152119
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17879
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
尚也淳,刘忠立,王姝睿. 6H—SiC Schottky二极管的正向特性[J]. 半导体学报,2003,24(5):504-509.
APA 尚也淳,刘忠立,&王姝睿.(2003).6H—SiC Schottky二极管的正向特性.半导体学报,24(5),504-509.
MLA 尚也淳,et al."6H—SiC Schottky二极管的正向特性".半导体学报 24.5(2003):504-509.
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