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Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD
Sun Guosheng; Luo Muchang; Wang Lei; Zhao Wanshun; Sun Yanling; Zeng Yiping; Li Jinmin
2003
Source Publication发光学报
Volume24Issue:4Pages:421-425
AbstractThe Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.
metadata_83novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding OrganizationSpecial Funds for Major State Basic Research Project (G2 683),National High technology (863) Research,Development Program of China (2 1AA311 9 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:1166021
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17869
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Sun Guosheng,Luo Muchang,Wang Lei,et al. Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD[J]. 发光学报,2003,24(4):421-425.
APA Sun Guosheng.,Luo Muchang.,Wang Lei.,Zhao Wanshun.,Sun Yanling.,...&Li Jinmin.(2003).Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD.发光学报,24(4),421-425.
MLA Sun Guosheng,et al."Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD".发光学报 24.4(2003):421-425.
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