SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)
Sun Guosheng; Sun Yanling; Wang Lei; Zhao Wanshun; Luo Muchang; Zhang Yongxing; Zeng Yiping; Li Jinmin; Lin Lanying
2003
Source Publication半导体学报
Volume24Issue:6Pages:567-573
AbstractHighly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).
metadata_83institute of semiconductors, the chineses academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划(No.G2 683),国家高技术研究发展计划(No.2 1AA311 9 )资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1176254
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17861
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Sun Guosheng,Sun Yanling,Wang Lei,et al. Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)[J]. 半导体学报,2003,24(6):567-573.
APA Sun Guosheng.,Sun Yanling.,Wang Lei.,Zhao Wanshun.,Luo Muchang.,...&Lin Lanying.(2003).Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100).半导体学报,24(6),567-573.
MLA Sun Guosheng,et al."Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)".半导体学报 24.6(2003):567-573.
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