Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

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	Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)
	Sun Guosheng; Sun Yanling; Wang Lei; Zhao Wanshun; Luo Muchang; Zhang Yongxing; Zeng Yiping; Li Jinmin; Lin Lanying
	2003
Source Publication	半导体学报
Volume	24 Issue:6 Pages:567-573
Abstract	Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).
metadata_83	institute of semiconductors, the chineses academy of sciences
Subject Area	半导体材料
Funding Organization	国家重点基础研究发展规划(No.G2 683),国家高技术研究发展计划(No.2 1AA311 9 )资助项目
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:1176254
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17861
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Sun Guosheng,Sun Yanling,Wang Lei,et al. Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)[J]. 半导体学报,2003,24(6):567-573.
APA	Sun Guosheng.,Sun Yanling.,Wang Lei.,Zhao Wanshun.,Luo Muchang.,...&Lin Lanying.(2003).Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100).半导体学报,24(6),567-573.
MLA	Sun Guosheng,et al."Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)".半导体学报 24.6(2003):567-573.

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