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Optimization of InGaAs Quantum Dots for Optoelectronic Applications
Duan Ruifei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping
2003
Source Publication半导体学报
Volume24Issue:10Pages:1009-1015
AbstractSelf-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.
metadata_83novel materials department, institute of semiconductors, the chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1233566
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17789
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Duan Ruifei,Wang Baoqiang,Zhu Zhanping,et al. Optimization of InGaAs Quantum Dots for Optoelectronic Applications[J]. 半导体学报,2003,24(10):1009-1015.
APA Duan Ruifei,Wang Baoqiang,Zhu Zhanping,&Zeng Yiping.(2003).Optimization of InGaAs Quantum Dots for Optoelectronic Applications.半导体学报,24(10),1009-1015.
MLA Duan Ruifei,et al."Optimization of InGaAs Quantum Dots for Optoelectronic Applications".半导体学报 24.10(2003):1009-1015.
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