SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SOI Waveguides Fabricated by Wet-Etching Method
Wang Xiaolong; Yan Qingfeng; Liu Jingwei; Chen Shaowu; Yu Jinzhong
2003
Source Publication半导体学报
Volume24Issue:10Pages:1025-1029
AbstractSOI waveguides fabricated by wet-etching method are demonstrated. The single mode waveguide and 1×2 3dB BBI splitter are analyzed and designed by three dimensional beam propagation method to correct the error of effective index method and guided mode method. The devices are fabricated. Excellent performances, such as low propagation loss of -1.37dB/cm, low excess of -2.2dB, and good uniformity of 0.3dB, are achieved.
metadata_83research center for optoelectronics, institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家重点基础研究发展规划(编号:G2 366),国家高技术研究发展计划(编号:2 2AA312 6 ),国家自然科学基金(批准号:6999 54 ,6989626 )资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:1233584
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17787
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaolong,Yan Qingfeng,Liu Jingwei,et al. SOI Waveguides Fabricated by Wet-Etching Method[J]. 半导体学报,2003,24(10):1025-1029.
APA Wang Xiaolong,Yan Qingfeng,Liu Jingwei,Chen Shaowu,&Yu Jinzhong.(2003).SOI Waveguides Fabricated by Wet-Etching Method.半导体学报,24(10),1025-1029.
MLA Wang Xiaolong,et al."SOI Waveguides Fabricated by Wet-Etching Method".半导体学报 24.10(2003):1025-1029.
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