SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of Windowed Very-Small-Aperture Laser Diodes
Kang Xiangning; Xu Yun; Song Guofeng; Ye Xiaojun; Chen Lianghui
2003
Source Publication半导体学报
Volume24Issue:11Pages:1145-1148
AbstractA windowed very-small-aperture laser 9VSAL0 source for use in high-resolution near field optical data storage is fabricated. The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect. It facilitates producing VSAL by simplified technology and improves the laser performance. A VSAL with 400nm small sperture is demonstrated by focused ion beam (FIB0 and the output power is 0.3mW at 31mA.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目(No. 2 2AA313 6 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:1235913
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17771
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Kang Xiangning,Xu Yun,Song Guofeng,et al. Fabrication of Windowed Very-Small-Aperture Laser Diodes[J]. 半导体学报,2003,24(11):1145-1148.
APA Kang Xiangning,Xu Yun,Song Guofeng,Ye Xiaojun,&Chen Lianghui.(2003).Fabrication of Windowed Very-Small-Aperture Laser Diodes.半导体学报,24(11),1145-1148.
MLA Kang Xiangning,et al."Fabrication of Windowed Very-Small-Aperture Laser Diodes".半导体学报 24.11(2003):1145-1148.
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