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集成电路薄膜工艺的新进展——化学液相淀积
孙捷; 孙迎春
2003
Source Publication材料导报
Volume17Issue:10Pages:78-79
Abstract介绍了化学液相淀积法制备氧化物薄膜的工艺过程及其在集成电路生产中的应用,并报道了一些最新研究成果。
metadata_83中科院半导体所;山东大学外国语学院
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:1236018
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17769
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
孙捷,孙迎春. 集成电路薄膜工艺的新进展——化学液相淀积[J]. 材料导报,2003,17(10):78-79.
APA 孙捷,&孙迎春.(2003).集成电路薄膜工艺的新进展——化学液相淀积.材料导报,17(10),78-79.
MLA 孙捷,et al."集成电路薄膜工艺的新进展——化学液相淀积".材料导报 17.10(2003):78-79.
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