SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
紧缩型SOI多模干涉光开关的设计
王章涛; 余金中
2003
Source Publication光电子·激光
Volume14Issue:9Pages:897-900
Abstract提出了一种新的紧缩型SOI多模干涉(MMI)光开关。开关由单模输入输出波导和MMI耦合器组成。通过在多模波导区域引入调制区,利用Si的等离子色散效应(PDE)改变调制区的折射率来实现开关动作。用FD-BPM方法对开关的工作原理和性能进行了模拟与分析。结果表明,光开尖良好的综合性能,而整个开关的长度只有7mm。
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金资助项目(6989626 ,6999 54 ),国家“973”资助项目(G2 366)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1237646
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17757
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王章涛,余金中. 紧缩型SOI多模干涉光开关的设计[J]. 光电子·激光,2003,14(9):897-900.
APA 王章涛,&余金中.(2003).紧缩型SOI多模干涉光开关的设计.光电子·激光,14(9),897-900.
MLA 王章涛,et al."紧缩型SOI多模干涉光开关的设计".光电子·激光 14.9(2003):897-900.
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