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Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals
Chen Qin; Huang Yongzhen; Guo Weihua; Yu Lijuan
2003
Source Publication半导体学报
Volume24Issue:12Pages:1233-1238
AbstractThe band structure of 2D photonic crystals (PCs) and localized states resulting from defects are analyzed by finite-difference time-domain (FDTD) technique and Pade approximation. The effect of dielectric constant contrast and filling factor on photonic bandgap (PBG) for perfect PCs and localized states in PCs with point defects are investigated. The resonant frequencies and quality factors are calculated for PCs with different defects. The numerical results show that it is possible to modulate the location, width and number of PBGs and frequencies of the localized states only by changing the dielectric constant contrast and filling factor.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Funding Organization国家自然科学基金(批准号:6 225 11),国家重大基础研究(批准号:G2 366)
Indexed ByCSCD
Language英语
CSCD IDCSCD:1241113
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17755
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Chen Qin,Huang Yongzhen,Guo Weihua,et al. Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals[J]. 半导体学报,2003,24(12):1233-1238.
APA Chen Qin,Huang Yongzhen,Guo Weihua,&Yu Lijuan.(2003).Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals.半导体学报,24(12),1233-1238.
MLA Chen Qin,et al."Modulation of Photonic Bandgap and Localized States by Dielectric Constant Contrast and Filling Factor in Photonic Crystals".半导体学报 24.12(2003):1233-1238.
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