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双异质外延SOI材料Si/γ-Al_3O_3/Si的外延生长
谭利文; 王俊; 王启元; 郁元桓; 邓惠芳; 王建华; 林兰英
2003
Source Publication半导体学报
Volume24Issue:12Pages:1289-1292
Abstract利用MOCVD(metalorganic chemical vapor deposition)和APCVD(atmosphere chemical vapor deposition)硅外延技术在Si(100)衬底上成功地制备了双异质Si/γ-Al_2O_3/Si SOI材料。利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)及俄歇能谱(AES)对材料进行了表征。测试结果表明,外延生长的γ-Al_2O_3和Si薄膜都是单晶薄膜,其结晶取向为(100)方向,外延层中Al与O化学配比为2:3。同时,γ-Al_2O_3外延层具有良好的绝缘性能,其介电常数为8.3,击穿场强为2.5MV/cm。AES的结果表明,Si/γ-Al_2O_3/Si双异质外延SOI材料两个异质界面陡峭清晰。
metadata_83中科院半导体所材料科学中心
Subject Area半导体材料
Funding Organization国家重点基础研究专项经费资助项目(No. G2 365)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1241222
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17753
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭利文,王俊,王启元,等. 双异质外延SOI材料Si/γ-Al_3O_3/Si的外延生长[J]. 半导体学报,2003,24(12):1289-1292.
APA 谭利文.,王俊.,王启元.,郁元桓.,邓惠芳.,...&林兰英.(2003).双异质外延SOI材料Si/γ-Al_3O_3/Si的外延生长.半导体学报,24(12),1289-1292.
MLA 谭利文,et al."双异质外延SOI材料Si/γ-Al_3O_3/Si的外延生长".半导体学报 24.12(2003):1289-1292.
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