SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots
Wei Quanxiang; Niu Zhichuan
2003
Source PublicationSemiconductor Photonics and Technology
Volume9Issue:1Pages:30-33
AbstractSelf-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.
metadata_83dept. of phys. ,shanxi university;institute of semiconductors, chinese academy of sciences
Subject Area半导体物理
Funding OrganizationNational Natural Science Foundation of China(6 176 6),Projects of Nano-science Technology of Chinese Academy of Sciences
Indexed ByCSCD
Language英语
CSCD IDCSCD:1271098
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17741
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wei Quanxiang,Niu Zhichuan. Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots[J]. Semiconductor Photonics and Technology,2003,9(1):30-33.
APA Wei Quanxiang,&Niu Zhichuan.(2003).Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots.Semiconductor Photonics and Technology,9(1),30-33.
MLA Wei Quanxiang,et al."Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots".Semiconductor Photonics and Technology 9.1(2003):30-33.
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