SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Selective Area Growth InGaAsP by MOVPE
Qiu Weibin; Dong Jie; Wang Wei; Zhou Fan
2003
Source Publication半导体学报
Volume24Issue:4Pages:342-346
AbstractThe wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .
metadata_83national research center for optoelectronic technology,institute of semiconductors,the chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1292557
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17723
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Qiu Weibin,Dong Jie,Wang Wei,et al. Selective Area Growth InGaAsP by MOVPE[J]. 半导体学报,2003,24(4):342-346.
APA Qiu Weibin,Dong Jie,Wang Wei,&Zhou Fan.(2003).Selective Area Growth InGaAsP by MOVPE.半导体学报,24(4),342-346.
MLA Qiu Weibin,et al."Selective Area Growth InGaAsP by MOVPE".半导体学报 24.4(2003):342-346.
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