SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Single Layer Growth of Strained Epitaxy at Low Temperature
Duan Ruifei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping
2003
Source Publication半导体学报
Volume24Issue:4Pages:362-365
AbstractContacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C are found to be large islands with atomic thick terraces. AFM measurements reveale near one monolayer high steps. This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.
metadata_83novel materials department,institute of demiconductors,the chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1292561
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17719
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Duan Ruifei,Wang Baoqiang,Zhu Zhanping,et al. Single Layer Growth of Strained Epitaxy at Low Temperature[J]. 半导体学报,2003,24(4):362-365.
APA Duan Ruifei,Wang Baoqiang,Zhu Zhanping,&Zeng Yiping.(2003).Single Layer Growth of Strained Epitaxy at Low Temperature.半导体学报,24(4),362-365.
MLA Duan Ruifei,et al."Single Layer Growth of Strained Epitaxy at Low Temperature".半导体学报 24.4(2003):362-365.
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