SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
超低亚表面损伤层GaAs抛光晶片的工艺
俊鹏; 郑红军; 赵冀; 朱蓉辉; 尹玉华
2003
Source Publication半导体学报
Volume24Issue:4Pages:445-448
Abstract在不同弹性抛光布、不同氧化浓度、不同pH值的抛光液等条件下进行了化学机械抛光试验,并用TEM测量了晶片亚表面损伤层厚度。研究发现抛光布的弹性及抛光液的氧化和化学去除能力决定了GaAs抛光晶片的亚表面损伤层深度,并分析和讨论了其原因。
metadata_83中国科学院半导体研究所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:1292576
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17717
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
俊鹏,郑红军,赵冀,等. 超低亚表面损伤层GaAs抛光晶片的工艺[J]. 半导体学报,2003,24(4):445-448.
APA 俊鹏,郑红军,赵冀,朱蓉辉,&尹玉华.(2003).超低亚表面损伤层GaAs抛光晶片的工艺.半导体学报,24(4),445-448.
MLA 俊鹏,et al."超低亚表面损伤层GaAs抛光晶片的工艺".半导体学报 24.4(2003):445-448.
Files in This Item:
File Name/Size DocType Version Access License
4892.pdf(203KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[俊鹏]'s Articles
[郑红军]'s Articles
[赵冀]'s Articles
Baidu academic
Similar articles in Baidu academic
[俊鹏]'s Articles
[郑红军]'s Articles
[赵冀]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[俊鹏]'s Articles
[郑红军]'s Articles
[赵冀]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.