SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
与CMOS工艺兼容的硅基光发射器件研究进展
陈弘达; 毛陆虹; 孙增辉; 崔增文; 高鹏; 陈永权; 申荣炫
2003
Source Publication光电子·激光
Volume14Issue:3Pages:327-330
Abstract本文概述了近年来该器件的研究与进展,从发光机理、器件研制和应用前景等方面做了详细的叙述。
metadata_83中科院半导体所;天津大学电子与信息工程学院
Subject Area光电子学
Funding Organization国家“863计划资助项目(2 2AA312 8 ,2 2AA31224 ,2 2AA122 32),国家自然科学重大基金项目(6989626 )
Indexed ByCSCD
Language中文
CSCD IDCSCD:1295372
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17701
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈弘达,毛陆虹,孙增辉,等. 与CMOS工艺兼容的硅基光发射器件研究进展[J]. 光电子·激光,2003,14(3):327-330.
APA 陈弘达.,毛陆虹.,孙增辉.,崔增文.,高鹏.,...&申荣炫.(2003).与CMOS工艺兼容的硅基光发射器件研究进展.光电子·激光,14(3),327-330.
MLA 陈弘达,et al."与CMOS工艺兼容的硅基光发射器件研究进展".光电子·激光 14.3(2003):327-330.
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