SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
全耗尽CMOS/SOI工艺
刘新宇; 孙海峰; 刘洪民; 陈焕章; 扈焕章; 海潮和; 和致经; 吴德馨
2003
Source Publication半导体学报
Volume24Issue:1Pages:104-108
Abstract对全耗尽CMOS/SOI工艺进行了研究,成功地开发出成套全耗尽CMOS/SOI抗辐照工艺,其关键工艺技术包括:氮化H2-O2合成薄栅氧、双栅和注Ge硅化物等技术,经过工艺设计,获得性能良好的抗辐照CMOS/SOI器件和电路(包括101级环振、2000门门海阵列等)其中,nMOS:Vt=0.7V,Vds=4.5-5.2V,μeff=465cm^2/(V·S),PMOS:Vt=-0.8V,Vds=-5~-6.3V,μeff=264cm^2/(V·S),当工作电压为5V时,0.8μm环振单级延迟为45ps。
metadata_83中国科学院微电子中心;中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:1297992
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17693
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘新宇,孙海峰,刘洪民,等. 全耗尽CMOS/SOI工艺[J]. 半导体学报,2003,24(1):104-108.
APA 刘新宇.,孙海峰.,刘洪民.,陈焕章.,扈焕章.,...&吴德馨.(2003).全耗尽CMOS/SOI工艺.半导体学报,24(1),104-108.
MLA 刘新宇,et al."全耗尽CMOS/SOI工艺".半导体学报 24.1(2003):104-108.
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