Knowledge Management System Of Institute of Semiconductors,CAS
| Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier | |
| Qiu Weibin; He Guomin; Dong Jie; WangWei | |
| 2003 | |
| Source Publication | 半导体学报
 |
| Volume | 24Issue:1Pages:11-17 |
| Abstract | The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density. |
| metadata_83 | 中科院半导体所国家光电子工艺中心;deparement of physics, xiamen univeristy |
| Subject Area | 半导体器件 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:1297994 |
| Date Available | 2010-11-23 |
| Citation statistics |
Cited Times:1[CSCD]
[CSCD Record]
|
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17691 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Qiu Weibin,He Guomin,Dong Jie,et al. Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier[J]. 半导体学报,2003,24(1):11-17. |
| APA | Qiu Weibin,He Guomin,Dong Jie,&WangWei.(2003).Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier.半导体学报,24(1),11-17. |
| MLA | Qiu Weibin,et al."Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier".半导体学报 24.1(2003):11-17. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4879.pdf（374KB） | 限制开放 | -- | Application Full Text | |||
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