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Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier | |
Qiu Weibin; He Guomin; Dong Jie; WangWei | |
2003 | |
Source Publication | 半导体学报
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Volume | 24Issue:1Pages:11-17 |
Abstract | The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density. |
metadata_83 | 中科院半导体所国家光电子工艺中心;deparement of physics, xiamen univeristy |
Subject Area | 半导体器件 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:1297994 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17691 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Qiu Weibin,He Guomin,Dong Jie,et al. Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier[J]. 半导体学报,2003,24(1):11-17. |
APA | Qiu Weibin,He Guomin,Dong Jie,&WangWei.(2003).Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier.半导体学报,24(1),11-17. |
MLA | Qiu Weibin,et al."Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier".半导体学报 24.1(2003):11-17. |
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