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Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier
Qiu Weibin; He Guomin; Dong Jie; WangWei
2003
Source Publication半导体学报
Volume24Issue:1Pages:11-17
AbstractThe theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.
metadata_83中科院半导体所国家光电子工艺中心;deparement of physics, xiamen univeristy
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1297994
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17691
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Qiu Weibin,He Guomin,Dong Jie,et al. Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier[J]. 半导体学报,2003,24(1):11-17.
APA Qiu Weibin,He Guomin,Dong Jie,&WangWei.(2003).Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier.半导体学报,24(1),11-17.
MLA Qiu Weibin,et al."Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier".半导体学报 24.1(2003):11-17.
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