SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SOI电光开关中热光效应分析
严清峰; 余金中
2003
Source Publication光电子·激光
Volume14Issue:1Pages:1-4
Abstract分析了SOI(silicon-on-insulator)2×2电光开关工作时热光效应对等离子色散效应的影响。采用二维半导器件模拟器PISCES-Ⅱ对器件进行模块。结果表明,热光效应对等离子色散效应的影响与调制区长度密切相关,当调制区长度较短时,热光效应的影响不容忽视;当调制区长度大于500μm时,这种影响可以忽略不计
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学重大基金资助项目(6999 54 6989626 ),国家“九七三“资助项目(G2 366)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1298099
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17685
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
严清峰,余金中. SOI电光开关中热光效应分析[J]. 光电子·激光,2003,14(1):1-4.
APA 严清峰,&余金中.(2003).SOI电光开关中热光效应分析.光电子·激光,14(1),1-4.
MLA 严清峰,et al."SOI电光开关中热光效应分析".光电子·激光 14.1(2003):1-4.
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