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GaN基MSM结构紫外光探测器
王俊; 赵德刚; 刘宗顺; 冯淦; 朱建军; 沈晓民; 张宝顺; 杨辉
2003
Source Publication中国科学. G辑, 物理
Volume33Issue:1Pages:34-38
Abstract在蓝宝石(0001)衬底上采用低压金属有机物公学气相沉积(MOCVD)方法生长GaN外延层,以此为材料,制作了暗电流很小的金属半导体金属(MSM)结紫外光探测器,测量了该紫外光探测器的暗电流和360nm波长光照下的光电流曲线,光响应曲线和响应度随偏压变化的曲线,该紫外光线探测器在5V偏压时暗电流为1.03nA,在10V 偏压时暗电流为15.3nA,在15V偏压下该紫外光探测器在366nm 波长处的响应度达到0.166A/W,在365nm波长左右有陡峭的截止边.从0-15V,该紫外光探测器在360nm波长处的响应度随着偏压的增加而增大.详细地分析了该紫外光探测器的暗电流,光电流,响应度随偏压变化的关系.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家“八六三”计划基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:1299926
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17681
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王俊,赵德刚,刘宗顺,等. GaN基MSM结构紫外光探测器[J]. 中国科学. G辑, 物理,2003,33(1):34-38.
APA 王俊.,赵德刚.,刘宗顺.,冯淦.,朱建军.,...&杨辉.(2003).GaN基MSM结构紫外光探测器.中国科学. G辑, 物理,33(1),34-38.
MLA 王俊,et al."GaN基MSM结构紫外光探测器".中国科学. G辑, 物理 33.1(2003):34-38.
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