SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Lanxide技术合成含烧结助剂的复合AIN粉体
林志浪; 郑新和; 王群; 周美玲
2003
Source Publication无机材料学报
Volume18Issue:6Pages:1351-1356
Abstract高纯度的氮气中,以Al-Mg-Y合金为母合金,利用Lanxide技术合成了含烧结助剂 Y_2O_3的复合AIN粉体.通过扫描电镜、X射线衍射、粒径分析及化学成分分析等检测手段对氮化产物进行表征.实验结果表明,合金氮化反应完全,氮化产物疏松易于粉化.粉化后获得的复合AIN粉体具有纯度高,氧杂质含量低,粒度细小等优点。
metadata_83中科院上海微系统与信息技术所;中国科学院半导体研究所;北京工业大学材料科学与工程学院
Subject Area半导体材料
Funding Organization国家自然科学基金(598 2 1)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1313360
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17655
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
林志浪,郑新和,王群,等. Lanxide技术合成含烧结助剂的复合AIN粉体[J]. 无机材料学报,2003,18(6):1351-1356.
APA 林志浪,郑新和,王群,&周美玲.(2003).Lanxide技术合成含烧结助剂的复合AIN粉体.无机材料学报,18(6),1351-1356.
MLA 林志浪,et al."Lanxide技术合成含烧结助剂的复合AIN粉体".无机材料学报 18.6(2003):1351-1356.
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