SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Co—Design of Monolithically Integrated Photo—Detectorand Optical—Receiver
Gao Peng; Chen Hongda; Mao Luhong; Jia Jiuchun; Chen Yongquan; Sun Zenghui
2004
Source Publication半导体学报
Volume25Issue:2Pages:133-137
metadata_83Institute of Semiconductors, The Chinese Academy of Sciences;School of Electronic InformationEngineering, Tianjin University
Other AbstractA behavioral model of the photodiode is presented.The model describes the relationship between photocurrent and incident optical power,and it also illustrates the impact of the reverse bias to the variation of the junction capacitance.According to this model,the photodiode and a CMOS receiver circuit are simulated and designed simultaneously under a universal circuit simulation environment.
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目(Nos.2 lAA312 8 ,2 1AAl22 32,2 2AA31224 )
Indexed ByCSCD
Language英语
CSCD IDCSCD:1359121
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17619
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Gao Peng,Chen Hongda,Mao Luhong,等. Co—Design of Monolithically Integrated Photo—Detectorand Optical—Receiver[J]. 半导体学报,2004,25(2):133-137.
APA Gao Peng,Chen Hongda,Mao Luhong,Jia Jiuchun,Chen Yongquan,&Sun Zenghui.(2004).Co—Design of Monolithically Integrated Photo—Detectorand Optical—Receiver.半导体学报,25(2),133-137.
MLA Gao Peng,et al."Co—Design of Monolithically Integrated Photo—Detectorand Optical—Receiver".半导体学报 25.2(2004):133-137.
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