SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer
Wang Yonggang; Li Chaoyang; Ma Xiaoyu; Zhang Zhigang
2004
Source Publication半导体学报
Volume25Issue:2Pages:148-151
AbstractA passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported.The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler.62ns pulse duration of single pulse is obtained.
metadata_83institute n}semiconductors,the chinese academy oi sciences;school of applied mathematics and physics,beijing university of technology;school of applied mathematics and_physics,beijing university of technology
Subject Area半导体器件
Indexed ByCSCD
Language英语
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17617
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Yonggang,Li Chaoyang,Ma Xiaoyu,et al. Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer[J]. 半导体学报,2004,25(2):148-151.
APA Wang Yonggang,Li Chaoyang,Ma Xiaoyu,&Zhang Zhigang.(2004).Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer.半导体学报,25(2),148-151.
MLA Wang Yonggang,et al."Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer".半导体学报 25.2(2004):148-151.
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