High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
	Fang Gaozhan; Xiao Jianwei; Ma Xiaoyu; Xu Zuntu; Zhang Jinming; Tan Manqing; Liu Zongshun; Liu Suping; Feng Xiaoming
	2002
Source Publication	Chinese Journal of Lasers
Volume	11 Issue:1 Pages:9-13
Abstract	The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.
metadata_83	institute of semiconductors, the chinese academy of sciences
Subject Area	光电子学
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1364517
Date Available	2010-11-23
Citation statistics	Cited Times:4[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17603
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Fang Gaozhan,Xiao Jianwei,Ma Xiaoyu,et al. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. Chinese Journal of Lasers,2002,11(1):9-13.
APA	Fang Gaozhan.,Xiao Jianwei.,Ma Xiaoyu.,Xu Zuntu.,Zhang Jinming.,...&Feng Xiaoming.(2002).High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide.Chinese Journal of Lasers,11(1),9-13.
MLA	Fang Gaozhan,et al."High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide".Chinese Journal of Lasers 11.1(2002):9-13.

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