SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide
Fang Gaozhan; Xiao Jianwei; Ma Xiaoyu; Xu Zuntu; Zhang Jinming; Tan Manqing; Liu Zongshun; Liu Suping; Feng Xiaoming
2002
Source PublicationChinese Journal of Lasers
Volume11Issue:1Pages:9-13
AbstractThe 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:1364517
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17603
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Fang Gaozhan,Xiao Jianwei,Ma Xiaoyu,et al. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. Chinese Journal of Lasers,2002,11(1):9-13.
APA Fang Gaozhan.,Xiao Jianwei.,Ma Xiaoyu.,Xu Zuntu.,Zhang Jinming.,...&Feng Xiaoming.(2002).High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide.Chinese Journal of Lasers,11(1),9-13.
MLA Fang Gaozhan,et al."High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide".Chinese Journal of Lasers 11.1(2002):9-13.
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