Knowledge Management System Of Institute of Semiconductors,CAS
High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide | |
Fang Gaozhan; Xiao Jianwei; Ma Xiaoyu; Xu Zuntu; Zhang Jinming; Tan Manqing; Liu Zongshun; Liu Suping; Feng Xiaoming | |
2002 | |
Source Publication | Chinese Journal of Lasers
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Volume | 11Issue:1Pages:9-13 |
Abstract | The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates. |
metadata_83 | institute of semiconductors, the chinese academy of sciences |
Subject Area | 光电子学 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:1364517 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17603 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Fang Gaozhan,Xiao Jianwei,Ma Xiaoyu,et al. High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide[J]. Chinese Journal of Lasers,2002,11(1):9-13. |
APA | Fang Gaozhan.,Xiao Jianwei.,Ma Xiaoyu.,Xu Zuntu.,Zhang Jinming.,...&Feng Xiaoming.(2002).High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide.Chinese Journal of Lasers,11(1),9-13. |
MLA | Fang Gaozhan,et al."High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide".Chinese Journal of Lasers 11.1(2002):9-13. |
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