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SOI thermo-optic modulator with fast response
Wang Xiaohong; Liu Jingwei; Yan Qingfeng; Chen Shaowu; Yu Jinzhong
2003
Source PublicationChinese Optics Letters
Volume1Issue:9Pages:527-528
AbstractSilicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.
metadata_83research center for optoelectronics, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:1586194
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17525
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaohong,Liu Jingwei,Yan Qingfeng,et al. SOI thermo-optic modulator with fast response[J]. Chinese Optics Letters,2003,1(9):527-528.
APA Wang Xiaohong,Liu Jingwei,Yan Qingfeng,Chen Shaowu,&Yu Jinzhong.(2003).SOI thermo-optic modulator with fast response.Chinese Optics Letters,1(9),527-528.
MLA Wang Xiaohong,et al."SOI thermo-optic modulator with fast response".Chinese Optics Letters 1.9(2003):527-528.
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