SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High-speed electrooptical VOA integrated in silicon-on-insulator
Yan Qingfeng; Yu Jinzhong; Xia Jinsong; Liu Zhongli
2003
Source PublicationChinese Optics Letters
Volume1Issue:4Pages:217-219
AbstractIn this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.
metadata_83institute of semiconductors, chinese academy of sciences;microelectronics r&d center, institute of semiconductors, chinese academy of sciences
Subject Area微电子学
Funding OrganizationNational Natu-ral Science Foundation of China under Grant,"973" Project bythe National Science and Technology Ministry under Contract
Indexed ByCSCD
Language英语
CSCD IDCSCD:1586214
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17519
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Yan Qingfeng,Yu Jinzhong,Xia Jinsong,et al. High-speed electrooptical VOA integrated in silicon-on-insulator[J]. Chinese Optics Letters,2003,1(4):217-219.
APA Yan Qingfeng,Yu Jinzhong,Xia Jinsong,&Liu Zhongli.(2003).High-speed electrooptical VOA integrated in silicon-on-insulator.Chinese Optics Letters,1(4),217-219.
MLA Yan Qingfeng,et al."High-speed electrooptical VOA integrated in silicon-on-insulator".Chinese Optics Letters 1.4(2003):217-219.
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