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SOI CMOS模拟集成电路发展概述
刘忠立
2004
Source Publication微电子学
Volume34Issue:4Pages:384-389
Abstract从SOI CMOS模拟集成电路(IC)中存在的关键问题--浮体效应--及其影响出发,介绍了在解决浮体效应以后,已实现的有代表性的模拟集成电路的发展状况.特别指出了SOICMOS在实现RF电路及SOC芯片中的优点.
metadata_83中国科学院,半导体研究所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:1605014
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17485
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
刘忠立. SOI CMOS模拟集成电路发展概述[J]. 微电子学,2004,34(4):384-389.
APA 刘忠立.(2004).SOI CMOS模拟集成电路发展概述.微电子学,34(4),384-389.
MLA 刘忠立."SOI CMOS模拟集成电路发展概述".微电子学 34.4(2004):384-389.
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