SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching
Xu Yun; Cao Qing; Sun Yongwei; Ye Xiaojun; Hou Shihua; Guo Liang; Chen Lianghui
2004
Source Publication半导体学报
Volume25Issue:9Pages:1079-1083
AbstractHigh power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.
metadata_83institute of semiconductors,the chinese academy of sciences
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:1608174
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17483
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xu Yun,Cao Qing,Sun Yongwei,et al. High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching[J]. 半导体学报,2004,25(9):1079-1083.
APA Xu Yun.,Cao Qing.,Sun Yongwei.,Ye Xiaojun.,Hou Shihua.,...&Chen Lianghui.(2004).High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching.半导体学报,25(9),1079-1083.
MLA Xu Yun,et al."High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching".半导体学报 25.9(2004):1079-1083.
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