High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

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	High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD
	Zhang Yongxing; Sun Guosheng; Wang Lei; Zhao Wanshun; Gao Xin; Zeng Yiping; Li Jinmin; Li Siyuan
	2004
Source Publication	半导体学报
Volume	25 Issue:9 Pages:1091-1096
metadata_83	novel semiconductor material laboratory,the chinese academy of sciences;school of physical science and technology, lanzhou university
Other Abstract	The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.
Subject Area	半导体材料
Funding Organization	国家重点基础研究专项基金,国家高技术研究与发展计划
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1608221
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17481
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Zhang Yongxing,Sun Guosheng,Wang Lei,et al. High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD[J]. 半导体学报,2004,25(9):1091-1096.
APA	Zhang Yongxing.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,Gao Xin.,...&Li Siyuan.(2004).High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD.半导体学报,25(9),1091-1096.
MLA	Zhang Yongxing,et al."High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD".半导体学报 25.9(2004):1091-1096.

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