SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD
Zhang Yongxing; Sun Guosheng; Wang Lei; Zhao Wanshun; Gao Xin; Zeng Yiping; Li Jinmin; Li Siyuan
2004
Source Publication半导体学报
Volume25Issue:9Pages:1091-1096
metadata_83novel semiconductor material laboratory,the chinese academy of sciences;school of physical science and technology, lanzhou university
Other AbstractThe high temperature (300~480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.
Subject Area半导体材料
Funding Organization国家重点基础研究专项基金,国家高技术研究与发展计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:1608221
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17481
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhang Yongxing,Sun Guosheng,Wang Lei,et al. High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD[J]. 半导体学报,2004,25(9):1091-1096.
APA Zhang Yongxing.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,Gao Xin.,...&Li Siyuan.(2004).High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD.半导体学报,25(9),1091-1096.
MLA Zhang Yongxing,et al."High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD".半导体学报 25.9(2004):1091-1096.
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