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快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究
边历锋; 江德生; 陆书龙
2004
Source Publication稀有金属
Volume28Issue:3Pages:582-584
Abstract分析了MBE生长的GaInNAs/GaAs单量子阱样品的光致荧光谱(PL),细致地研究了在弱激发功率下GaInNAs/GaAs样品的发光峰位的 s-型反常温度依赖关系。并对材料进行了退火处理,结果发现退火有效地改善材料的发光特性,并且会造成s-型的转变温度降低,从而说明退火可以有效地减少局域态。
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金资助项目(6 276 3),国家自然科学基金资助项目(6 276 3)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1621490
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17461
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
边历锋,江德生,陆书龙. 快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究[J]. 稀有金属,2004,28(3):582-584.
APA 边历锋,江德生,&陆书龙.(2004).快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究.稀有金属,28(3),582-584.
MLA 边历锋,et al."快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究".稀有金属 28.3(2004):582-584.
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