Knowledge Management System Of Institute of Semiconductors,CAS
| Non-stoichiometry Related Deep Level Defects in Semi-insulating InP | |
| Zhao Youwen; Dong Zhiyuan; Duan Manlong; Sun Wenrong; Yang Zixiang; Lu Xuru; Wang Yingli | |
| 2004 | |
| Source Publication | 人工晶体学报
 |
| Volume | 33Issue:4Pages:535-538 |
| Abstract | Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results. |
| metadata_83 | material science centre, institute of semiconductors, chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | 国家自然科学基金 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:1629526 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17451 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Zhao Youwen,Dong Zhiyuan,Duan Manlong,et al. Non-stoichiometry Related Deep Level Defects in Semi-insulating InP[J]. 人工晶体学报,2004,33(4):535-538. |
| APA | Zhao Youwen.,Dong Zhiyuan.,Duan Manlong.,Sun Wenrong.,Yang Zixiang.,...&Wang Yingli.(2004).Non-stoichiometry Related Deep Level Defects in Semi-insulating InP.人工晶体学报,33(4),535-538. |
| MLA | Zhao Youwen,et al."Non-stoichiometry Related Deep Level Defects in Semi-insulating InP".人工晶体学报 33.4(2004):535-538. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4742.pdf（271KB） | 限制开放 | -- | Application Full Text | |||
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