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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Non-stoichiometry Related Deep Level Defects in Semi-insulating InP
作者: Zhao Youwen;  Dong Zhiyuan;  Duan Manlong;  Sun Wenrong;  Yang Zixiang;  Lu Xuru;  Wang Yingli
发表日期: 2004
摘要: Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.
刊名: 人工晶体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhao Youwen;Dong Zhiyuan;Duan Manlong;Sun Wenrong;Yang Zixiang;Lu Xuru;Wang Yingli.Non-stoichiometry Related Deep Level Defects in Semi-insulating InP,人工晶体学报,2004,33(4):535-538
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