SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Non-stoichiometry Related Deep Level Defects in Semi-insulating InP
Zhao Youwen; Dong Zhiyuan; Duan Manlong; Sun Wenrong; Yang Zixiang; Lu Xuru; Wang Yingli
2004
Source Publication人工晶体学报
Volume33Issue:4Pages:535-538
AbstractSemi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, including Fe-doping in indium-rich melt and high temperature annealing undoped wafer in phosphorus and iron phosphide ambients. Deep level defects related with non-stoichiometry have been detected in the SI-InP samples. A close relationship between the material quality of electrical property and native deep defects has been revealed by a comprehensive study of defects in as-grown Fe-doped and annealed undoped SI-InP materials. Fe-doped SI-InP material with low carrier mobility and poor thermal stability contains a high concentration of deep defects with energy levels in the range of 0.1-0.4eV. The suppression of the defects by high temperature annealing undoped InP leads to the manufacture of high quality SI-InP with high mobility and good electrical uniformity. A technology for the growth of high quality SI-InP through stoichiometry control has been proposed based on the results.
metadata_83material science centre, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:1629526
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17451
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Youwen,Dong Zhiyuan,Duan Manlong,et al. Non-stoichiometry Related Deep Level Defects in Semi-insulating InP[J]. 人工晶体学报,2004,33(4):535-538.
APA Zhao Youwen.,Dong Zhiyuan.,Duan Manlong.,Sun Wenrong.,Yang Zixiang.,...&Wang Yingli.(2004).Non-stoichiometry Related Deep Level Defects in Semi-insulating InP.人工晶体学报,33(4),535-538.
MLA Zhao Youwen,et al."Non-stoichiometry Related Deep Level Defects in Semi-insulating InP".人工晶体学报 33.4(2004):535-538.
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