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题名: Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers
作者: Li Dabing;  Dong Xun;  Liu Xianglin;  Wang Xiaohui;  Wang Zhanguo
发表日期: 2004
摘要: In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.
刊名: 人工晶体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li Dabing;Dong Xun;Liu Xianglin;Wang Xiaohui;Wang Zhanguo.Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers,人工晶体学报,2004,33(4):539-544
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