SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers
Li Dabing; Dong Xun; Liu Xianglin; Wang Xiaohui; Wang Zhanguo
2004
Source Publication人工晶体学报
Volume33Issue:4Pages:539-544
AbstractIn order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金,国家973计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:1629547
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17449
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Dabing,Dong Xun,Liu Xianglin,et al. Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers[J]. 人工晶体学报,2004,33(4):539-544.
APA Li Dabing,Dong Xun,Liu Xianglin,Wang Xiaohui,&Wang Zhanguo.(2004).Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers.人工晶体学报,33(4),539-544.
MLA Li Dabing,et al."Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers".人工晶体学报 33.4(2004):539-544.
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