SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
离子束外延制备GaAs:Gd薄膜
宋书林; 陈诺夫; 周剑平; 尹志岗; 李艳丽; 杨少延; 刘志凯
2004
Source Publication功能材料
Volume35Issue:3Pages:336-337
Abstract室温务件下,用低能离子束外延制备了GaAs
metadata_83中国科学院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目(6 176 1),国家自然科学基金资助项目(6 176 1),国家重大基础研究计划资助项目(G2 365和G2 2CB3119 5)
Indexed ByCSCD
Language中文
CSCD IDCSCD:1632019
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17447
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
宋书林,陈诺夫,周剑平,等. 离子束外延制备GaAs:Gd薄膜[J]. 功能材料,2004,35(3):336-337.
APA 宋书林.,陈诺夫.,周剑平.,尹志岗.,李艳丽.,...&刘志凯.(2004).离子束外延制备GaAs:Gd薄膜.功能材料,35(3),336-337.
MLA 宋书林,et al."离子束外延制备GaAs:Gd薄膜".功能材料 35.3(2004):336-337.
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