SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers
Wang Shurong; Wang Hui; Wang Baojun; Zhu Hongliang; Zhang Jing; Ding Ying; Zhao Lingjuan; Zhou Fan; Wang Lufeng; Wang Wei
2004
Source Publication光电子·激光
Volume15Issue:8Pages:906-909
AbstractRidge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy(LP-MOVPE) and tested.The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature.A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained.In oddition,the side mode suppression ratio (SMSR) is 27.5 dB.
metadata_83the center of optoelectronics research &- development,institute of semiconductors,the chinese a-cademy of science;department of electronic engineering, the chinese university of hong kong, shatin,new territories
Subject Area半导体器件
Funding OrganizationSupported by the National Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:1660612
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17421
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Shurong,Wang Hui,Wang Baojun,et al. 1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers[J]. 光电子·激光,2004,15(8):906-909.
APA Wang Shurong.,Wang Hui.,Wang Baojun.,Zhu Hongliang.,Zhang Jing.,...&Wang Wei.(2004).1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers.光电子·激光,15(8),906-909.
MLA Wang Shurong,et al."1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers".光电子·激光 15.8(2004):906-909.
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