SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of a SOI Based Channel-shifted Multimode Interference Coupler
Wang Zhangtao; Fan Zhongchao; Chen Shaowu; Yu Jinzhong
2004
Source Publication光子学报
Volume33Issue:9Pages:1047-1049
AbstractA silicon-on-insulator based channel-shifted multimode interference coupler is designed and fabricated. A two dimensional beam propagation method is used to analyze the dependence of coupler′s performances on the width and length of the multimode waveguide. The device fabricated has a power shift ratio of 73 and an excess loss of about 2.2 dB. An enhancement of fabrication accuracies could further improve the coupler performances.
metadata_83中科院半导体所
Subject Area光电子学
Funding OrganizationNational Natural science foundation of China,National 863 Project,Key Development Program for Basic Research of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:1667023
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17415
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Zhangtao,Fan Zhongchao,Chen Shaowu,et al. Fabrication of a SOI Based Channel-shifted Multimode Interference Coupler[J]. 光子学报,2004,33(9):1047-1049.
APA Wang Zhangtao,Fan Zhongchao,Chen Shaowu,&Yu Jinzhong.(2004).Fabrication of a SOI Based Channel-shifted Multimode Interference Coupler.光子学报,33(9),1047-1049.
MLA Wang Zhangtao,et al."Fabrication of a SOI Based Channel-shifted Multimode Interference Coupler".光子学报 33.9(2004):1047-1049.
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