SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
超薄有源层谐振腔增强型调制器
杨晓红; 梁琨; 韩勤; 牛智川; 杜云; 吴荣汉
2004
Source Publication光子学报
Volume33Issue:10Pages:1196-1199
Abstract提出利用超薄有源层制备高性能谐振腔增强型(RCE)半导体电吸收调制器件的可能性,并与波导型器件进行性能对比;对透射和反射两种类型器件优化分析了器件结构,进行了性能比较,结果表明:在插入损耗相当的情况下,反射式器件具有更高的调制对比度.
metadata_83中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然基金,国家"973计划"
Indexed ByCSCD
Language中文
CSCD IDCSCD:1688899
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17389
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨晓红,梁琨,韩勤,等. 超薄有源层谐振腔增强型调制器[J]. 光子学报,2004,33(10):1196-1199.
APA 杨晓红,梁琨,韩勤,牛智川,杜云,&吴荣汉.(2004).超薄有源层谐振腔增强型调制器.光子学报,33(10),1196-1199.
MLA 杨晓红,et al."超薄有源层谐振腔增强型调制器".光子学报 33.10(2004):1196-1199.
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