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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers
作者: Liu Zhihong;  Wang Wei;  Wang Shurong;  Zhao Lingjuan;  Zhu Hongliang;  Zhou Fan;  Wang Lufeng;  Ding Ying
发表日期: 2004
摘要: A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu Zhihong;Wang Wei;Wang Shurong;Zhao Lingjuan;Zhu Hongliang;Zhou Fan;Wang Lufeng;Ding Ying.A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers,半导体学报,2004,25(6):620-625
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