SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers
Liu Zhihong; Wang Wei; Wang Shurong; Zhao Lingjuan; Zhu Hongliang; Zhou Fan; Wang Lufeng; Ding Ying
2004
Source Publication半导体学报
Volume25Issue:6Pages:620-625
AbstractA 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.
metadata_83optic - electronic research and development center, institrte of semiconductors,the chinese academy of sciences
Subject Area半导体材料
Funding OrganizationNational Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:1693078
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17375
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Liu Zhihong,Wang Wei,Wang Shurong,et al. A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers[J]. 半导体学报,2004,25(6):620-625.
APA Liu Zhihong.,Wang Wei.,Wang Shurong.,Zhao Lingjuan.,Zhu Hongliang.,...&Ding Ying.(2004).A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers.半导体学报,25(6),620-625.
MLA Liu Zhihong,et al."A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers".半导体学报 25.6(2004):620-625.
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