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Si基片上掺Ge SiO2的火焰水解法制备
郜定山; 李建光; 王红杰; 安俊明; 李健; 夏君磊; 胡雄伟
2004
Source Publication半导体学报
Volume25Issue:6Pages:674-677
Abstract用火焰水解法在单晶Si片上沉积了掺Ge的SiO2(GeO2-SiO2)粉末,随后在高温炉中将此粉末烧结成玻璃.用光学显微镜观察了样品表面形貌,研究了不同的烧结工艺对样品形貌的影响.用X射线光电子能谱检测了样品的元素组成,并用棱镜耦合法测量了样品的折射率和厚度.结果表明,用适宜的工艺条件制备出的掺Ge的SiO2具有表面平整光滑,折射率和厚度可调等优点,适合用作Si基SiO2波导器件的芯层.
metadata_83中国科学院半导体研究所光电子研究发展中心
Subject Area光电子学
Funding Organization国家自然科学基金,国家重点基础研究发展规划
Indexed ByCSCD
Language中文
CSCD IDCSCD:1693227
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17373
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郜定山,李建光,王红杰,等. Si基片上掺Ge SiO2的火焰水解法制备[J]. 半导体学报,2004,25(6):674-677.
APA 郜定山.,李建光.,王红杰.,安俊明.,李健.,...&胡雄伟.(2004).Si基片上掺Ge SiO2的火焰水解法制备.半导体学报,25(6),674-677.
MLA 郜定山,et al."Si基片上掺Ge SiO2的火焰水解法制备".半导体学报 25.6(2004):674-677.
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