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高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响
康香宁; 宋国峰; 叶晓军; 侯识华; 陈良惠
2004
Source Publication半导体学报
Volume25Issue:5Pages:589-593
Abstract针对可见光垂直腔面发射激光器的制备,通过湿氮氧化实验和测量微区光致发光谱分别研究了高铝组分AlxGa1-xAs的氧化特性及氧化产物的收缩应力对有源区的影响,结合器件结构设计确定了氧化限制层AlxGa1-x-As的铝组分和最佳位置,并制备出了低阈值电流的AlGaInP系垂直腔面发射激光器.
metadata_83中国科学院半导体研究所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:1697270
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17357
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
康香宁,宋国峰,叶晓军,等. 高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响[J]. 半导体学报,2004,25(5):589-593.
APA 康香宁,宋国峰,叶晓军,侯识华,&陈良惠.(2004).高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响.半导体学报,25(5),589-593.
MLA 康香宁,et al."高铝AlxGa1-xAs氧化层对垂直腔面发射激光器的影响".半导体学报 25.5(2004):589-593.
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