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| Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs | |
| Wang Shurong; Liu Zhihong; Wang Wei; Zhu Hongliang; Zhang Ruiying; Ding Ying; Zhao Lingjuan; Zhou Fan; Wang Lufeng | |
| 2004 | |
| Source Publication | 半导体学报
 |
| Volume | 25Issue:8Pages:898-902 |
| Abstract | A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (＜0. 7dB),fiber-to-fiber lossless operation current (70～90mA) and a high extinction ratio (＞50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm)and the whole L band (1570～ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems. |
| metadata_83 | the center of optoelectronics research & development, institute of semiconductors, the chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | 国家重点基础研究发展规划,国家自然科学基金 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:1701548 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17353 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Wang Shurong,Liu Zhihong,Wang Wei,et al. Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs[J]. 半导体学报,2004,25(8):898-902. |
| APA | Wang Shurong.,Liu Zhihong.,Wang Wei.,Zhu Hongliang.,Zhang Ruiying.,...&Wang Lufeng.(2004).Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs.半导体学报,25(8),898-902. |
| MLA | Wang Shurong,et al."Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs".半导体学报 25.8(2004):898-902. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4693.pdf（324KB） | 限制开放 | -- | Application Full Text | |||
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