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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs
作者: Wang Shurong;  Liu Zhihong;  Wang Wei;  Zhu Hongliang;  Zhang Ruiying;  Ding Ying;  Zhao Lingjuan;  Zhou Fan;  Wang Lufeng
发表日期: 2004
摘要: A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (<0. 7dB),fiber-to-fiber lossless operation current (70~90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520~1609nm) which nearly covers the spectral region of the whole C band (1525~1565nm)and the whole L band (1570~ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang Shurong;Liu Zhihong;Wang Wei;Zhu Hongliang;Zhang Ruiying;Ding Ying;Zhao Lingjuan;Zhou Fan;Wang Lufeng.Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs,半导体学报,2004,25(8):898-902
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