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Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs | |
Wang Shurong; Liu Zhihong; Wang Wei; Zhu Hongliang; Zhang Ruiying; Ding Ying; Zhao Lingjuan; Zhou Fan; Wang Lufeng | |
2004 | |
Source Publication | 半导体学报
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Volume | 25Issue:8Pages:898-902 |
Abstract | A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (<0. 7dB),fiber-to-fiber lossless operation current (70~90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520~1609nm) which nearly covers the spectral region of the whole C band (1525~1565nm)and the whole L band (1570~ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems. |
metadata_83 | the center of optoelectronics research & development, institute of semiconductors, the chinese academy of sciences |
Subject Area | 半导体材料 |
Funding Organization | 国家重点基础研究发展规划,国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:1701548 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17353 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Wang Shurong,Liu Zhihong,Wang Wei,et al. Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs[J]. 半导体学报,2004,25(8):898-902. |
APA | Wang Shurong.,Liu Zhihong.,Wang Wei.,Zhu Hongliang.,Zhang Ruiying.,...&Wang Lufeng.(2004).Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs.半导体学报,25(8),898-902. |
MLA | Wang Shurong,et al."Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs".半导体学报 25.8(2004):898-902. |
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