SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
半导体量子点中强耦合磁极化子的性质
王立国; 肖景林; 李树深
2004
Source Publication半导体学报
Volume25Issue:8Pages:937-941
Abstract采用线形组合算符和么正变换研究了磁场对半导体量子点中强耦合磁极化子基态的影响.结果表明,磁极化子束缚能、磁极化子振动频率随有效束缚强度增大而减小,随电子-体纵光学声子耦合强度增大而增大,随磁场强度增大而增大,即均由于半导体量子点的受限和磁场的增大而使量子点的极化加强,因此半导体量子点的极化是不容忽略的.
metadata_83内蒙古民族大学物理系;中国科学院半导体研究所
Subject Area半导体物理
Funding Organization国家自然科学基金,内蒙古自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:1701632
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17349
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王立国,肖景林,李树深. 半导体量子点中强耦合磁极化子的性质[J]. 半导体学报,2004,25(8):937-941.
APA 王立国,肖景林,&李树深.(2004).半导体量子点中强耦合磁极化子的性质.半导体学报,25(8),937-941.
MLA 王立国,et al."半导体量子点中强耦合磁极化子的性质".半导体学报 25.8(2004):937-941.
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