SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
2004
Source Publication半导体学报
Volume25Issue:12Pages:1549-1554
AbstractHorizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.
metadata_83novel semiconductor material laboratory,the chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1774209
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17329
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Sun Guosheng,Gao Xin,Zhang Yongxing,et al. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition[J]. 半导体学报,2004,25(12):1549-1554.
APA Sun Guosheng.,Gao Xin.,Zhang Yongxing.,Wang Lei.,Zhao Wanshun.,...&Li Jinmin.(2004).Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition.半导体学报,25(12),1549-1554.
MLA Sun Guosheng,et al."Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition".半导体学报 25.12(2004):1549-1554.
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