Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

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	Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
	Sun Guosheng; Gao Xin; Zhang Yongxing; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Jinmin
	2004
Source Publication	半导体学报
Volume	25 Issue:12 Pages:1549-1554
Abstract	Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.
metadata_83	novel semiconductor material laboratory,the chinese academy of sciences
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1774209
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17329
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Sun Guosheng,Gao Xin,Zhang Yongxing,et al. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition[J]. 半导体学报,2004,25(12):1549-1554.
APA	Sun Guosheng.,Gao Xin.,Zhang Yongxing.,Wang Lei.,Zhao Wanshun.,...&Li Jinmin.(2004).Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition.半导体学报,25(12),1549-1554.
MLA	Sun Guosheng,et al."Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition".半导体学报 25.12(2004):1549-1554.

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