SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Second-Order Raman Scattering from n- and p-Type 4H-SiC
Gao Xin; Sun Guosheng; Li Jinmin; Wang Lei; Zhao Wanshun; Zhang Yongxin; Zeng Yiping
2004
Source Publication半导体学报
Volume25Issue:12Pages:1555-1560
AbstractThe results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm-1 with energy difference about 10cm-1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm-1 of the second-order Raman is not the overtone of the A1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density.
metadata_83novel semiconductor material laboratory,the chinese academy of sciences;school of physical science and technology,lanzhou university
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:1774232
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17327
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Gao Xin,Sun Guosheng,Li Jinmin,et al. Second-Order Raman Scattering from n- and p-Type 4H-SiC[J]. 半导体学报,2004,25(12):1555-1560.
APA Gao Xin.,Sun Guosheng.,Li Jinmin.,Wang Lei.,Zhao Wanshun.,...&Zeng Yiping.(2004).Second-Order Raman Scattering from n- and p-Type 4H-SiC.半导体学报,25(12),1555-1560.
MLA Gao Xin,et al."Second-Order Raman Scattering from n- and p-Type 4H-SiC".半导体学报 25.12(2004):1555-1560.
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