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Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector | |
Li Chuanbo; Mao Rongwei; Zuo Yuhua![]() ![]() ![]() | |
2004 | |
Source Publication | 半导体学报
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Volume | 25Issue:12Pages:1576-1579 |
Abstract | A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times. |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Funding Organization | 国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:1774315 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/17323 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Li Chuanbo,Mao Rongwei,Zuo Yuhua,et al. Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J]. 半导体学报,2004,25(12):1576-1579. |
APA | Li Chuanbo.,Mao Rongwei.,Zuo Yuhua.,Cheng Buwen.,Shi Wenhua.,...&Wang Qiming.(2004).Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector.半导体学报,25(12),1576-1579. |
MLA | Li Chuanbo,et al."Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector".半导体学报 25.12(2004):1576-1579. |
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