Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector

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	Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector
	Li Chuanbo; Mao Rongwei; Zuo Yuhua; Cheng Buwen; Shi Wenhua; Zhao Lei; Luo Liping; Yu Jinzhong; Wang Qiming
	2004
Source Publication	半导体学报
Volume	25 Issue:12 Pages:1576-1579
Abstract	A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.
metadata_83	中科院半导体所
Subject Area	光电子学
Funding Organization	国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:1774315
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/17323
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Li Chuanbo,Mao Rongwei,Zuo Yuhua,et al. Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J]. 半导体学报,2004,25(12):1576-1579.
APA	Li Chuanbo.,Mao Rongwei.,Zuo Yuhua.,Cheng Buwen.,Shi Wenhua.,...&Wang Qiming.(2004).Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector.半导体学报,25(12),1576-1579.
MLA	Li Chuanbo,et al."Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector".半导体学报 25.12(2004):1576-1579.

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