SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector
Li Chuanbo; Mao Rongwei; Zuo Yuhua; Cheng Buwen; Shi Wenhua; Zhao Lei; Luo Liping; Yu Jinzhong; Wang Qiming
2004
Source Publication半导体学报
Volume25Issue:12Pages:1576-1579
AbstractA SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2~1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家重点基础研究发展规划,国家高技术研究发展计划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:1774315
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17323
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Chuanbo,Mao Rongwei,Zuo Yuhua,et al. Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector[J]. 半导体学报,2004,25(12):1576-1579.
APA Li Chuanbo.,Mao Rongwei.,Zuo Yuhua.,Cheng Buwen.,Shi Wenhua.,...&Wang Qiming.(2004).Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector.半导体学报,25(12),1576-1579.
MLA Li Chuanbo,et al."Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector".半导体学报 25.12(2004):1576-1579.
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