Knowledge Management System Of Institute of Semiconductors,CAS
| Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler | |
| Wang Yonggang; Ma Xiaoyu; Zhang Bingyuan; Chen Meng; Li Gang; Zhang Zhigang | |
| 2004 | |
| Source Publication | 半导体学报
 |
| Volume | 25Issue:12Pages:1595-1598 |
| Abstract | A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz. |
| metadata_83 | institute of semiconductors,the chinese academy of sciences;school of laser engineering,beijing university of technology |
| Subject Area | 半导体器件 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:1774370 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/17321 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,et al. Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler[J]. 半导体学报,2004,25(12):1595-1598. |
| APA | Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,Chen Meng,Li Gang,&Zhang Zhigang.(2004).Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler.半导体学报,25(12),1595-1598. |
| MLA | Wang Yonggang,et al."Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler".半导体学报 25.12(2004):1595-1598. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 4677.pdf（284KB） | 限制开放 | -- | Application Full Text | |||
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