SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler
Wang Yonggang; Ma Xiaoyu; Zhang Bingyuan; Chen Meng; Li Gang; Zhang Zhigang
2004
Source Publication半导体学报
Volume25Issue:12Pages:1595-1598
AbstractA novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.
metadata_83institute of semiconductors,the chinese academy of sciences;school of laser engineering,beijing university of technology
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1774370
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17321
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,et al. Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler[J]. 半导体学报,2004,25(12):1595-1598.
APA Wang Yonggang,Ma Xiaoyu,Zhang Bingyuan,Chen Meng,Li Gang,&Zhang Zhigang.(2004).Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler.半导体学报,25(12),1595-1598.
MLA Wang Yonggang,et al."Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler".半导体学报 25.12(2004):1595-1598.
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