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厚表层Si柔性绝缘衬底上SiC薄膜的外延生长
王晓峰; 王雷; 赵万顺; 孙国胜; 黄风义; 曾一平
2004
Source Publication半导体学报
Volume25Issue:12Pages:1652-1657
Abstract利用LPCVD方法,在厚表层Si(SOL≈0.5μm)柔性绝缘衬底(SOI)(001)上外延生长出了可与硅衬底上外延晶体质量相比拟的SiC/SOI,表明SOI是一种很有潜力的柔性衬底. Raman 光谱结果表明SiC/SOI外延层比SiC/Si外延层有更大的残存应力,对此从理论上进行了解释.利用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和喇曼散射光谱(RAM)技术研究了外延材料的晶体结构、界面性质和应变情况.
metadata_83中国科学院半导体研究所新材料实验室
Subject Area半导体材料
Funding Organization国家高技术研究发展计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:1774500
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17317
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王晓峰,王雷,赵万顺,等. 厚表层Si柔性绝缘衬底上SiC薄膜的外延生长[J]. 半导体学报,2004,25(12):1652-1657.
APA 王晓峰,王雷,赵万顺,孙国胜,黄风义,&曾一平.(2004).厚表层Si柔性绝缘衬底上SiC薄膜的外延生长.半导体学报,25(12),1652-1657.
MLA 王晓峰,et al."厚表层Si柔性绝缘衬底上SiC薄膜的外延生长".半导体学报 25.12(2004):1652-1657.
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